FNK10N02C

产品介绍1： ● VDS =20V,ID =100A RDS(ON) <3.3m Ω @ VGS=10V (Typ2.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability