FNK03N04K

产品介绍1： ● VDS =30V,ID =110A RDS(ON) <5.3mΩ @ VGS=4.5 RDS(ON) <4mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability