FNK10N02-A

Product introduction： ● VDS = 20V,ID =150A RDS(ON) <2.25mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability