FNK03N09M

FNK03N09M

Product introduction1： ● VDS =30V,ID =18A RDS(ON) < 9 mΩ @ VGS=10V RDS(ON) <15m Ω @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

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FNK03N09M.pdf

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